SGP02N120 Infineon Technologies, SGP02N120 Datasheet - Page 8

• Manufacturer Part Number: SGP02N120
• Description: IGBT NPT 1200V 6.2A 62W TO220-3
• Manufacturer: Infineon Technologies

Specifications of SGP02N120

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SGP02N120XK

Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30 s
25 s
20 s
15 s
10 s
20V
15V
10V
5 s
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
0nC
C
= 1200V, start at T
= 2A)
V
GE
11V
,
Q
GATE
GE
,
5nC
GATE CHARGE
-
12V
EMITTER VOLTAGE
j
= 25 C)
13V
U
10nC
CE
=960V
14V
SGD02N120,
15V
15n
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V V
100pF
10pF
40A
30A
20A
10A
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
V
= 0V, f = 1MHz)
CE
CE
V
,
GE
COLLECTOR
12V
1200V, T
,
GATE
10V
-
14V
EMITTER VOLTAGE
C
SGP02N120
-
= 25 C, T
EMITTER VOLTAGE
SGI02N120
20V
16V
Rev. 2.3
j
150 C)
18V
30V
C
C
C
Sep. 07
oss
rss
iss
20V