SGP02N120 Infineon Technologies, SGP02N120 Datasheet
SGP02N120
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SGP02N120 Summary of contents
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... E T Marking C off j 0.11mJ GP02N120 150 C 0.11mJ 02N120 150 C 0.11mJ GI02N120 150 C Symbol jmax 150 SGP02N120 SGI02N120 PG-TO-262-3-1 PG-TO-220-3-1 (I²-PAK) Package PG-TO-220-3-1 PG-TO-252-3-11 PG-TO-262-3-1 Value 1200 C E 6.2 2.8 9.6 9 -55...+150 260 260 Rev. 2.3 Unit ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors SGD02N120, Symbol Conditions PG-TO-220-3 PG-TO-262-3-1 R PG-TO-252-3- Symbol Conditions (one layer thick) copper area for 2 SGP02N120 SGI02N120 Max. Value Unit 2.0 K Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 100 - - 100 nA 1 205 250 Rev. 2.3 Sep. 07 ...
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... reverse recovery. =150 C j Symbol Conditions Energy losses include t s “tail” and diode reverse recovery. 3 SGP02N120 SGI02N120 Value Unit min. typ. max 260 340 - 0.16 0. 0.06 0.08 - 0.22 0.29 Value Unit min. typ. max 290 350 - 85 ...
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... V Figure 2. Safe operating area ( 25°C 100°C 125°C Figure 4. Collector current as a function of case temperature ( SGP02N120 SGI02N120 150 s 500 s 20ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... Power Semiconductors SGD02N120 Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP02N120 SGI02N120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE =1A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE j Rev. 2.3 Sep ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SGP02N120 SGI02N120 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 2A max. typ. min. ...
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... Fig K K/W E off -2 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SGP02N120 SGI02N120 *) E and E include losses on ts due to diode recovery. 50 100 150 R , GATE RESISTOR G = 150 +15V/0V 2A D=0.5 0.2 0 0.05 0.66735 ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 40A 30A 20A 10A 0A 14V 15V 10V Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V V 8 SGP02N120 SGI02N120 10V 20V 30V , - COLLECTOR EMITTER VOLTAGE 1MHz) 12V 14V 16V 18V V ...
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... Power Semiconductors SGD02N120, PG-TO220-3-1 9 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...
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... Power Semiconductors SGD02N120, PG-TO252-3-11 10 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...
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... Power Semiconductors SGD02N120, PG-TO262-3-1 (I² Pak) 10 ±0 0...0.3 1) 1.27 8.5 0.05 2.4 C 0...0.15 2.4 1. 0.75 ±0 2.54 0. Typical Metal surface min 7.25 6.9 All metal surfaces tin plated, except area of cut. 11 SGP02N120 SGI02N120 4.4 0.5 ±0.1 Rev. 2.3 Sep. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGD02N120, i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF. 12 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGD02N120, 13 SGP02N120 SGI02N120 Rev. 2.3 Sep. 07 ...