SGP02N120 Infineon Technologies, SGP02N120 Datasheet - Page 4

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SGP02N120

Manufacturer Part Number
SGP02N120
Description
IGBT NPT 1200V 6.2A 62W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGP02N120

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SGP02N120XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGP02N120
Manufacturer:
Infineon Technologies
Quantity:
25 330
Power Semiconductors
12A
10A
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
8A
6A
4A
2A
0A
60W
50W
40W
30W
20W
10W
GE
j
0W
j
10Hz
= +15V/0V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
I
,
c
CASE TEMPERATURE
G
= 91 )
75°C
1kHz
T
T
C
CE
C
=110°C
=80°C
= 800V,
100°C
10kHz
I
c
125°C
100kHz
SGD02N120,
4
0.01A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
1A
7A
6A
5A
4A
3A
2A
1A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
10V
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
SGP02N120
-
EMITTER VOLTAGE
SGI02N120
100V
j
100°C
150 C)
Rev. 2.3
1000V
125°C
500 s
DC
t
150 s
20ms
50 s
p
=10 s
Sep. 07

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