SGP02N120 Infineon Technologies, SGP02N120 Datasheet - Page 11

• Manufacturer Part Number: SGP02N120
• Description: IGBT NPT 1200V 6.2A 62W TO220-3
• Manufacturer: Infineon Technologies

Specifications of SGP02N120

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SGP02N120XK

Power Semiconductors
1)
0...0.15
0...0.3
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
2 x
C
2.54
PG-TO262-3-1 (I² Pak)
10
8.5
±0.2
SGD02N120,
1)
3 x 0.75
1.05
A
0.25
±0.1
11
M
A
B
C
0.05
B
1.27
2.4
2.4
4.4
0.5
±0.1
SGP02N120
SGI02N120
Rev. 2.3
Sep. 07