SKB02N60 E3266 Infineon Technologies, SKB02N60 E3266 Datasheet - Page 9

• Manufacturer Part Number: SKB02N60 E3266
• Description: IGBT NPT 600V 6A 30W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB02N60 E3266

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
500ns
400ns
300ns
200ns
100ns
5A
4A
3A
2A
1A
0A
R
R
0ns
20A/ s
= 200V, T
= 200V, T
20A/ s
d i
d i
F
F
60A/ s
/ d t,
/ d t,
I
60A/ s
F
j
j
= 2A
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
100A/ s
I
= 1A
100A/ s 140A/ s 180A/ s
F
= 4A
I
F
= 1A
I
F
140A/ s
= 4A
I
F
= 2A
180A/ s
9
250A/ s
200A/ s
150A/ s
100A/ s
280nC
240nC
200nC
160nC
120nC
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
Dynamic test circuit in Figure E)
50A/ s
80nC
40nC
0A/ s
0nC
R
R
20A/ s
= 200V, T
= 200V, T
20A/ s
d i
di
F
F
/ d t,
/dt,
60A/ s
60A/ s
j
j
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 4A
I
100A/ s 140A/ s 180A/ s
F
100A/ s
= 2A
SKB02N60
I
F
= 1A
140A/ s
Rev. 2.2
180A/ s
Oct. 07