SKB02N60 E3266 Infineon Technologies, SKB02N60 E3266 Datasheet

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SKB02N60 E3266

Manufacturer Part Number
SKB02N60 E3266
Description
IGBT NPT 600V 6A 30W TO263-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKB02N60 E3266

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 2A
Current - Collector (ic) (max)
6A
Power - Max
30W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Type
SKB02N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
1
2
C
C
C
C
C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
CE
GE
75% lower E
Short circuit withstand time – 10 s
Designed for frequency inverters for washing machines,
NPT-Technology for 600V applications offers:
Very soft, fast recovery anti-parallel EmCon diode
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
Complete product spectrum and PSpice Models :
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
fans, pumps and vacuum cleaners
CC
j
off
compared to previous generation
150 C
600V, T
600V
V
p
CE
limited by T
j
p
limited by T
2
150 C
2A
1
I
C
for target applications
jmax
jmax
V
2.2V
CE(sat)
http://www.infineon.com/igbt/
150 C
T
1
j
Marking
K06N60
Symbol
V
I
I
-
I
I
V
t
P
T
T
C
C p u l s
F
F p u l s
S C
j
s
C E
G E
t o t
, T
s t g
PG-TO-263-3-2
Package
-55...+150
SKB02N60
Value
600
245
6.0
2.9
6.0
2.9
12
12
12
10
30
20
Rev. 2.2
PG-TO-263-3-2
G
Unit
V
A
V
W
°C
C
s
Oct. 07
C
E

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SKB02N60 E3266 Summary of contents

Page 1

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time – Designed for frequency inverters for washing machines, fans, pumps ...

Page 2

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case 1) SMD version, device on PCB Electrical Characteristic Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter ...

Page 3

Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse ...

Page 4

T =80° =110° 10Hz 100Hz 1kHz 10kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 150 0.5, ...

Page 5

V =20V G E 15V 4A 13V 11V COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( ...

Page 6

I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load 150 0/+15V ...

Page 7

E and E include losses on ts due to diode recovery. 0.2mJ 0.1mJ 0.0mJ COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector current (inductive load ...

Page 8

Q , GATE CHARGE GE Figure 17. Typical gate charge ( 10V 11V 12V 13V ...

Page 9

200ns 100ns 0ns 20A/ s 60A/ s 100A/ s 140A/ s 180A DIODE CURRENT SLOPE F Figure 21. Typical reverse recovery time as ...

Page 10

V , FORWARD VOLTAGE F Figure 25. Typical diode forward current as a function of forward voltage 1 10 K/W D=0.5 0 K/W 0.1 0.05 ...

Page 11

PG-TO263-3-2 11 SKB02N60 Rev. 2.2 Oct. 07 ...

Page 12

Figure A. Definition of switching times Figure B. Definition of switching losses SKB02N60 i Figure C. Definition of diodes switching characteristics ( ...

Page 13

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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