SKB02N60 E3266 Infineon Technologies, SKB02N60 E3266 Datasheet - Page 5

• Manufacturer Part Number: SKB02N60 E3266
• Description: IGBT NPT 600V 6A 30W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB02N60 E3266

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8A
7A
6A
5A
4A
3A
2A
1A
0A
Figure 7. Typical transfer characteristics
(V
0V
7A
6A
5A
4A
3A
2A
1A
0A
Figure 5. Typical output characteristics
(T
CE
0V
j
= 25 C)
= 10V)
V
CE
V
V
2V
,
GE
COLLECTOR
G E
1V
,
=20V
15V
13V
11V
GATE
9V
7V
5V
4V
-
2V
EMITTER VOLTAGE
-
EMITTER VOLTAGE
6V
3V
T
j
+150°C
=+25°C
-55°C
8V
4V
10V
5V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
7A
6A
5A
4A
3A
2A
1A
0A
Figure 6. Typical output characteristics
(T
GE
0V
j
= 150 C)
= 15V)
V
CE
-50°C
V
,
T
G E
COLLECTOR
1V
j
,
=20V
JUNCTION TEMPERATURE
15V
13V
11V
9V
7V
5V
0°C
2V
-
EMITTER VOLTAGE
50°C
SKB02N60
3V
Rev. 2.2
100°C
I
I
C
C
= 4A
= 2A
4V
150°C
Oct. 07
5V