SKB02N60 E3266 Infineon Technologies, SKB02N60 E3266 Datasheet - Page 10

• Manufacturer Part Number: SKB02N60 E3266
• Description: IGBT NPT 600V 6A 30W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB02N60 E3266

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 25. Typical diode forward current as
a function of forward voltage
0.0V
4A
3A
2A
1A
0A
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
10
10
10
10
-1
-2
1
0
K/W
K/W
K/W
K/W
p
/ T)
1µs
0.01
0.1
0.02
0.05
0.5V
D=0.5
0.2
single pulse
V
10µs
F
-55°C
,
t
FORWARD VOLTAGE
p
,
25°C
PULSE WIDTH
100°C
100µs
1.0V
150°C
R
0.830
2.240
3.930
R , ( K / W )
1
C
1ms
1
=
1
1.5V
/ R
10ms 100ms
1
C
6.40*10
8.79*10
1.19*10
2
=
, ( s )
2
/R
2.0V
R
2
-3
-4
-4
2
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
2.5V
2.0V
1.5V
1.0V
-40°C
T
j
,
JUNCTION TEMPERATURE
0°C
40°C
SKB02N60
80°C 120°C
Rev. 2.2
I
I
F
F
= 4A
= 2A
Oct. 07