APT75GN120B2G Microsemi Power Products Group, APT75GN120B2G Datasheet - Page 5

• Manufacturer Part Number: APT75GN120B2G
• Description: IGBT 1200V 200A 833W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GN120B2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 200A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
6,000
1,000
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
Junction
temp. (°C)
500
100
V
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
0.0686
0.0630
0.0182
-4
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
0.0139
0.203
1.62
oes
res
SINGLE PULSE
50
10
-3
Figure 20, Operating Frequency vs Collector Current
60
10
5
1
10
T
T
D = 50 %
V
R
10
J
C
CE
G
= 125
= 75
= 1.0Ω
250
200
150
100
-2
= 800V
Figure 18,Minimim Switching Safe Operating Area
50
30
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
50
200
, COLLECTOR TO EMITTER VOLTAGE
70
400
Note:
Peak T J = P DM x Z θJC + T C
90
600
10
Duty Factor D =
-1
110
t 1
800 1000 1200 1400
t 2
130
APT75GN120B2_L(G)
t 1
150
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f