APT75GN120B2G Microsemi Power Products Group, APT75GN120B2G Datasheet - Page 3

• Manufacturer Part Number: APT75GN120B2G
• Description: IGBT 1200V 200A 833W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GN120B2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 200A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
160
140
120
100
160
140
120
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
0.5
J
2
, GATE-TO-EMITTER VOLTAGE (V)
T
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
J
T
T
= -55°C
T
J
10
J
J
0
= 125°C
1.0
= 25°C
= 125°C
T
4
J
T
= 25°C
J
25
= -55°C
1.5
6
12
50
2.0
8
75
2.5
10
100 125 150
14
3.0
J
12
= 25°C)
3.5
16
14
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
160
140
120
100
300
250
200
150
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
16
14
12
10
50
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50 -25
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 75A
-25
2
V
T
GE
T
100
C
J
V
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
CE
FIGURE 4, Gate Charge
4
0
0
V
GATE CHARGE (nC)
CE
= 600V
12V
25
25
= 240V
200
6
11V
13 &15V
50
50
8
10V
300
10
75
75 100 125 150
9V
100 125 150
12
V
CE
400
8V
J
= 960V
7V
14
= 125°C)
500
16