APT75GN120B2G Microsemi Power Products Group, APT75GN120B2G Datasheet - Page 4

• Manufacturer Part Number: APT75GN120B2G
• Description: IGBT 1200V 200A 833W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GN120B2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 200A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
50000
40000
30000
20000
10000
80000
60000
40000
20000
FIGURE 13, Turn-On Energy Loss vs Collector Current
180
160
140
120
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
70
60
50
40
30
20
10
80
60
40
20
0
0
0
0
I
I
CE
CE
I
CE
V
V
R
V
T
R
L = 100µH
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 1.0Ω
= 1.0Ω
=
= 800V
= +15V
= 800V
R
1.0Ω, L
T
G
J
, GATE RESISTANCE (OHMS)
=
,
or =125°C
25 or 125°C,V
=
100
V
GE
µ
H, V
= 15V
CE
GE
=
=
800V
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
25000
20000
15000
10000
50000
40000
30000
20000
10000
FIGURE 14, Turn Off Energy Loss vs Collector Current
5000
FIGURE 10, Turn-Off Delay Time vs Collector Current
800
700
600
500
400
300
200
100
300
250
200
150
100
FIGURE 12, Current Fall Time vs Collector Current
50
0
0
0
0
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
=
J
V
1.0Ω
, JUNCTION TEMPERATURE (°C)
800V
GE
=15V,T
J
=125°C
T
V
J
GE
=
125°C, V
=15V,T
J
=25°C
GE
=
15V