APT11GP60BDQBG Microsemi Power Products Group, APT11GP60BDQBG Datasheet - Page 7

• Manufacturer Part Number: APT11GP60BDQBG
• Description: IGBT 600V 41A 187W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT11GP60BDQBG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 11A
• Current - Collector (ic) (max): 41A
• Power - Max: 187W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MAXIMUM RATINGS
TYPICAL PERFORMANCE CURVES
STATIC ELECTRICAL CHARACTERISTICS
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Symbol
I
Symbol
F
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
I
F
(RMS)
I
FSM
(AV)
V
F
Characteristic / Test Conditions
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Characteristic / Test Conditions
Forward Voltage
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Dimensions in Millimeters and (Inches)
T0-247 Package Outline
C
20.80 (.819)
21.46 (.845)
= 121°C, Duty Cycle = 0.5)
19.81 (.780)
20.32 (.800)
J
= 45°C, 8.3ms)
I
I
I
F
F
F
= 11A
= 22A
= 11A, T
6.15 (.242) BSC
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
J
2-Plcs.
= 125°C
All Ratings: T
15.49 (.610)
16.26 (.640)
C
= 25°C unless otherwise specified.
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
(Cathode)
Emitter
(Anode)
MIN
APT11GP60BDQB
2.20
2.90
1.90
TYP
110
14
8
APT11GP60BDQB
MAX
Amps
UNIT
UNIT
Volts