APT11GP60BDQBG Microsemi Power Products Group, APT11GP60BDQBG Datasheet - Page 5

• Manufacturer Part Number: APT11GP60BDQBG
• Description: IGBT 600V 41A 187W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT11GP60BDQBG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 11A
• Current - Collector (ic) (max): 41A
• Power - Max: 187W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Case temperature(°C)
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
2,000
1,000
0.70
0.60
0.50
0.40
0.30
0.20
0.10
500
100
V
50
10
CE
0
5
1
10
0
Junction
temp (°C)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(watts)
Power
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.1
0.9
0.5
0.05
0.7
0.3
20
RC MODEL
10
30
-4
0.376
0.295
40
RECTANGULAR PULSE DURATION (SECONDS)
C ies
C oes
C res
SINGLE PULSE
50
0.00350F
0.0545F
10
-3
1000
Figure 20, Operating Frequency vs Collector Current
500
100
50
10
0
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
= 200V
Figure 18, Minimim Switching Safe Operating Area
-2
50
45
40
35
30
25
20
15
10
I
C
°
5
0
°
5
C
, COLLECTOR CURRENT (A)
C
0
V
CE
100
, COLLECTOR TO EMITTER VOLTAGE
10
200
Note:
15
300
Peak T J = P DM x Z θJC + T C
10
Duty Factor D =
-1
400
20
t 1
t 2
500
25
t 1
/ t
600
F
f
f
P
2
max1
max 2
max
diss
=
=
=
=
1.0
700
min(f
T
t
E
P
R
J
d (on )
diss
on 2
−
θ
JC
T
−
max1
+
+
C
P
E
t
cond
0.05
r
, f
off
+
max 2
t
d(off )
)
+
t
f