APT11GP60BDQBG Microsemi Power Products Group, APT11GP60BDQBG Datasheet - Page 3

• Manufacturer Part Number: APT11GP60BDQBG
• Description: IGBT 600V 41A 187W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT11GP60BDQBG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 11A
• Current - Collector (ic) (max): 41A
• Power - Max: 187W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
3.5
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
0
FIGURE 1, Output Characteristics(V
-50
V
0
0
6
CE
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
T
-25
V GE = 15V.
J
, GATE-TO-EMITTER VOLTAGE (V)
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
8
1
T
T J = 125°C
0
I
C
C
T
=-55°C
C
=
T
=125°C
C
22A
10
T J = 25°C
4
=25°C
25
T J = -55°C
2
I
C
=
50
12
6
11A
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
75
C
T J = 25°C.
3
=
14
8
5.5A
GE
100
= 15V)
125
16
10
4
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
15
10
16
14
12
10
60
50
40
30
20
10
5
0
8
6
4
2
0
0
0
FIGURE 2, Output Characteristics (V
-50
-50
V
0
0
CE
250µs PULSE TEST
T
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
<0.5 % DUTY CYCLE
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 11A
-25
V GE = 10V.
5
-25
V GE = 15V.
T
T
C
J
, CASE TEMPERATURE (°C)
10
FIGURE 4, Gate Charge
, Junction Temperature (°C)
1
0
V
I
C
0
GATE CHARGE (nC)
CE
T
T
=
C
C
T
= 300V
=125°C
25
=-55°C
V
15
5.5A
C
CE
=25°C
25
= 120V
I
50
20
2
C
=
50
11A
75
25
V
75
100 125 150
CE
30
3
I
= 480V
C
=
GE
100
35
22A
= 10V)
125
40
4