APT50GT120B2RDQ2G Microsemi Power Products Group, APT50GT120B2RDQ2G Datasheet - Page 8

• Manufacturer Part Number: APT50GT120B2RDQ2G
• Description: IGBT 1200V 94A 625W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120B2RDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 94A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120B2RDQ2GMI; APT50GT120B2RDQ2GMI

Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Dynamic Parameters vs. Junction Temperature
5000
4000
3000
2000
1000
200
180
160
140
120
100
200
180
160
140
120
100
Figure 31. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
80
60
40
20
0
Figure 25. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
t
T
V
rr
V
J
R
F
T
F
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
= 800V
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
T
25
J
V
1
I
= 125°C
RRM
R
, REVERSE VOLTAGE (V)
T
60A
400
J
50
= 175°C
Q
2
rr
10
600
75
15A
3
800
100
T
J
t
rr
= -55°C
T
Q
1000
4
125
J
rr
30A
= 25°C
100 200
1200
150
5
Figure 26. Reverse Recovery Time vs. Current Rate of Change
Figure 30. Maximum Average Forward Current vs. CaseTemperature
Figure 28. Reverse Recovery Current vs. Current Rate of Change
600
500
400
300
200
100
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
T
V
V
J
F
J
R
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 125°C
= 800V
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
60A
60A
600
600
100
15A
30A
APT50GT120B2RDQ2G
800
800
125
Duty cycle = 0.5
T
1000
1000
J
150
= 175°C
30A
15A
1200
1200
175