APT50GT120B2RDQ2G Microsemi Power Products Group, APT50GT120B2RDQ2G Datasheet

IGBT 1200V 94A 625W TO247

APT50GT120B2RDQ2G

Manufacturer Part Number
APT50GT120B2RDQ2G
Description
IGBT 1200V 94A 625W TO247
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT50GT120B2RDQ2G

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
94A
Power - Max
625W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GT120B2RDQ2GMI
APT50GT120B2RDQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GT120B2RDQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
The Thunderbolt IGBT
Non-Punch-Through Technology, the Thunderbolt IGBT
ness and ultrafast switching speed.
Maximum Ratings
Static Electrical Characteristics
Symbol Parameter
Symbol Characteristic / Test Conditions
T
V
V
V
SSOA
Features
• Low Forward Voltage Drop
• Low Tail Current
• RoHS Compliant
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
T
CM
CES
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
Thunderbolt IGBT
is a new generation of high voltage power IGBTs. Using
1
CE
CE
CE
Microsemi Website - http://www.microsemi.com
= V
= 1200V, V
= 1200V, V
GE
GE
GE
GE
= 15V, I
= 15V, I
C
C
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
, I
= 100°C
= 25°C
J
= ±20V)
= 150°C
C
= 2mA, T
®
GE
GE
GE
C
C
®
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
offers superior rugged-
j
= 25°C)
C
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
2
All Ratings: T
2
APT50GT120B2RDQ2G
C
= 25°C unless otherwise specified.
1200V, 50A, V
1200
Min
4.5
2.7
-
-
-
-
150A @ 1200V
-55 to 150
Ratings
1200
±30
150
625
300
94
50
Typ
5.5
3.2
4.0
-
-
-
-
CE(ON)
.
Max
TBD
300
300
6.5
3.7
= 3.2V Typical
-
-
Amps
Unit
Volts
Watts
Unit
Volts
°C
μA
nA

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APT50GT120B2RDQ2G Summary of contents

Page 1

... I = 50A 125° 1200V 0V 25° 1200V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT50GT120B2RDQ2G 1200V, 50A 3.2V Typical CE(ON) = 25°C unless otherwise specified. C Ratings 1200 ± Amps 150 150A @ 1200V 625 -55 to 150 300 Min Typ Max 1200 - - 4.5 5 ...

Page 2

Dynamic Characteristic Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc SSOA Switching Safe Operating Area ...

Page 3

... T = 150° 25° 100A FIGURE 6, On State Voltage vs Junction Temperature 100 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT50GT120B2RDQ2G 15V 13V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° 50A V = 240V 25° 600V 960V ...

Page 4

... FIGURE 14, Turn-Off Energy Loss vs Collector Current 20,000 E 100A on2, 15,000 10,000 5,000 E 100A off, E 50A off, E 25A on2, E 25A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT50GT120B2RDQ2G V =15V,T =125° =15V,T =25° 800V CE 1.0Ω 100µ 100 ...

Page 5

... SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) 120 100 T (° 0.151 Figure 20, Operating Frequency vs Collector Current APT50GT120B2RDQ2G 160 140 120 100 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE FIGURE 18, Minimum Switching Safe Operating Area Note Duty Factor D = ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90 125°C J 90% Gate Voltage t d(off) Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on 10% Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions 0 APT50GT120B2RDQ2G Gate Voltage T = 125°C J 90% Collector Current 5% Collector Voltage ...

Page 7

... T = 125° SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.570 0.231 0.00241 0.210 FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT50GT120B2RDQ2G = 25°C unless otherwise specified. C APT50GT120B2RDQ2G 30 43 210 Min Type Max 2.8 3.3 3.4 2.1 Min Typ Max 320 - - 545 - - 4 ...

Page 8

... CURRENT RATE OF CHANGE (A/µs) F Figure 28. Reverse Recovery Current vs. Current Rate of Change 150 25 50 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature APT50GT120B2RDQ2G 60A 30A 15A 400 600 800 1000 1200 60A 30A 15A 400 600 800 1000 1200 Duty cycle = 0 175° ...

Page 9

... Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT50GT120B2RDQ2G D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 0.25 I RRM 3 2 5.38 (.212) 6 ...

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