APT50GT120B2RDQ2G Microsemi Power Products Group, APT50GT120B2RDQ2G Datasheet - Page 3

• Manufacturer Part Number: APT50GT120B2RDQ2G
• Description: IGBT 1200V 94A 625W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120B2RDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 94A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120B2RDQ2GMI; APT50GT120B2RDQ2GMI

Typical Performance Curves
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
150
125
100
100
150
125
75
50
25
75
50
25
6
5
4
3
2
1
0
-.50 -.25
0
0
FIGURE 1, Output Characteristics (T
8
0
V
0
CE
V
GE
TEST<0.5 % DUTY
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
FIGURE 3, Transfer Characteristics
250µs PULSE
CE
= 15V
9
1
GE
2
T
T
CYCLE
T
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, GATE-TO-EMITTER VOLTAGE (V)
J
J
= 25°C.
= 125°C
J
= 125°C
, JUNCTION TEMPERATURE
10
0
2
4
T
T
J
J
T
= 55°C
T
= 25°C
11
25
J
3
J
= 25°C
= -55°C
6
12
50
4
I
I
C
I
C
8
C
13
= 50A
= 25A
75
5
= 100A
T
J
10
= 150°C
100 125
14
6
J
12
15
7
= 25°C)
16
14
150
8
150
100
100
FIGURE 8, DC Collector Current vs Case Temperature
125
FIGURE 6, On State Voltage vs Junction Temperature
25
16
14
12
10
75
50
80
60
40
20
7
6
5
4
3
2
1
0
0
8
6
4
2
0
0
FIGURE 2, Output Characteristics (T
25
V
25
0
0
CE
<0.5 % DUTY CYCLE
T
250µs PULSE TEST
I
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
J
I
C
= 25°C
= 50A
50
= 100A
15V
V
5
GE
50
50
= 15V.
T
T
J
100
, Junction Temperature (°C)
C
FIGURE 4, Gate charge
13V
, Case Temperature (°C)
I
GATE CHARGE (nC)
10
C
= 50A
75
75
150
V
15
V
CE
CE
200
APT50GT120B2RDQ2G
100
100
= 600V
= 240V
I
C
20
= 25A
250
11V
V
125
125
CE
10V
25
300
J
= 960V
9V
= 25°C)
6V
7V
8V
350
150
150
30