STGW30NC120HD STMicroelectronics, STGW30NC120HD Datasheet - Page 5

• Manufacturer Part Number: STGW30NC120HD
• Description: IGBT N-CHAN 1200V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC120HD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.75V
• Power Dissipation Pd: 220W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5314-5

STGW30NC120HD
Table 6.
Table 7.
1.
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
Eon
Eon
t
t
E
E
t
t
t
t
r
r
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
off
off
E
E
I
(
(
Q
t
t
t
t
rrm
V
t
off
off
r
r
f
f
ts
ts
off
off
rr
rr
(2)
(2)
f
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
V
R
Tj= 25°C
V
R
Tj= 125°C
V
R
Tj=25°C
V
R
Tj= 125°C
V
R
Tj= 25°C
V
R
Tj= 125°C
If = 20A, Tj = 25°C
If = 20A, Tj = 125°C
If = 20A, V
T
(see Figure 20)
CC
CC
G
G
CC
CC
CC
CC
G
G
G
G
j
= 10Ω , V
= 10Ω , V
= 125°C, di/dt = 100A/µs
= 10Ω , V
= 10Ω , V
= 10Ω , V
= 10Ω , V
= 960V, I
= 960V, I
= 960V, I
= 960V, I
= 960V, I
= 960V, I
Test conditions
Test conditions
Test conditions
(see Figure 17)
(see Figure 17)
(see Figure 17)
(see Figure 17)
(see Figure 17)
(see Figure 17)
R
GE
GE
GE
GE
GE
GE
= 27V,
C
C
C
C
C
C
= 15V,
= 15V,
= 15V,
= 15V,
= 15V,
= 15V,
= 20A
= 20A
= 20A
= 20A
= 20A
= 20A
Electrical characteristics
Min.
Min.
Min.
1820
1580
Typ.
1660
4438
6098
3015
6900
9915
Typ.
Typ.
275
312
150
336
592
152
722
1.9
1.7
29
11
27
14
90
9
Max.
Max.
Max.
2.5
A/µs
A/µs
Unit
Unit
Unit
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
V
A
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