STGW30NC120HD STMicroelectronics, STGW30NC120HD Datasheet - Page 3

IGBT N-CHAN 1200V 30A TO-247

STGW30NC120HD

Manufacturer Part Number
STGW30NC120HD
Description
IGBT N-CHAN 1200V 30A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW30NC120HD

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.75V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
+/- 25 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
220 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
2.75V
Power Dissipation Pd
220W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5314-5

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Part Number:
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Manufacturer:
ST
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STGW30NC120HD
1
Electrical ratings
Table 2.
1.
2. Vclamp=80% of BVces, Tj=150°C, R
Table 3.
I
C
Symbol
Rthj-case
(
Rthj-amb
Rthj-amb
Symbol
T
I
V
P
I
I
CL
C
V
Calculated according to the iterative formula:
C
C
CES
TOT
T
)
GE
I
(1)
(1)
f
=
j
(2)
----------------------------------------------------------------------------------------------------- -
R
THJ C
Collector-emitter voltage (V
Collector current (continuous) at 25°C
Collector current (continuous) at 100°C
Collector current (pulsed)
Gate-emitter voltage
Total dissipation at T
Diode RMS forward current at T
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case
Thermal resistance junction-ambient (diode)
Thermal resistance junction-ambient (IGBT)
×
T
V
JMAX
CESAT MAX
(
T
C
)
(
T
C
,
I
C
Parameter
C
)
Parameter
= 25°C
G
=10Ω, V
GS
= 0)
GE
C
= 25°C
=15V
–55 to 150
Value
Value
1200
0.57
135
±25
220
1.6
60
30
30
30
Electrical ratings
°C/W
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
V
A
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