STGW30NC120HD STMicroelectronics, STGW30NC120HD Datasheet - Page 12

• Manufacturer Part Number: STGW30NC120HD
• Description: IGBT N-CHAN 1200V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC120HD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.75V
• Power Dissipation Pd: 220W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5314-5

Revision history
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Document revision history
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Table 2.: Absolute maximum ratings
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Figure 5.
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Table 2.: Absolute maximum ratings
Table 4.: Static
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Figure 9.
Table 4.: Static
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STGW30NC120HD