STGW30NC120HD STMicroelectronics, STGW30NC120HD Datasheet - Page 4

IGBT N-CHAN 1200V 30A TO-247

STGW30NC120HD

Manufacturer Part Number
STGW30NC120HD
Description
IGBT N-CHAN 1200V 30A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW30NC120HD

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.75V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
+/- 25 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
220 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
2.75V
Power Dissipation Pd
220W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5314-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGW30NC120HD
Manufacturer:
NIEC
Quantity:
2 000
Part Number:
STGW30NC120HD
Manufacturer:
ST
0
Part Number:
STGW30NC120HD GW30NC120HD
Manufacturer:
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Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
V
V
Symbol
Symbol
V
CASE
BR(CES)
CE(SAT)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter leakage
current (V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
Parameter
Parameter
GE
CE
= 0)
= 0)
I
V
V
V
V
V
V
V
V
I
C
C
GE
GE
CE
CE
CE
GE
CE
CE
CE
= 20A,V
= 1mA, V
= V
= 15V, I
= 15V, I
=Max rating,Tc=25°C
=Max rating, Tc=125°C
=± 20V, V
= 25V
= 25V, f = 1 MHz, V
= 960V,
Test conditions
Test conditions
GE
, I
GE
,
I
C
C
GE
C
C
=15V
= 20A, Tj= 25°C
= 20A, Tj=125°C
= 250µA
= 20A
CE
= 0
= 0
GE
=0
1200
Min.
3.75
Min.
STGW30NC120HD
Typ.
2510
2.2
2.0
Typ. Max.
175
110
14
30
16
49
± 100
Max.
2.75
5.75
500
10
Unit
Unit
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V
S

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