STGB10NB37LZT4 STMicroelectronics, STGB10NB37LZT4 Datasheet - Page 7

• Manufacturer Part Number: STGB10NB37LZT4
• Description: IGBT N-CHAN 20A CLAMP D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Internally Clampedr

Specifications of STGB10NB37LZT4

• Voltage - Collector Emitter Breakdown (max): 440V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 4.5V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 125W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Capacitance, Gate: 1250 pF
• Current, Collector: 20 A
• Package Type: D2Pak
• Polarity: N-Channel
• Power Dissipation: 125 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Voltage, Collector To Emitter Shorted: Clamped
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-4106-2

STGB10NB37LZ, STGP10NB37LZ
Figure 8.
Figure 10. Normalized clamping voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized gate threshold voltage
vs temperature
temperature
Doc ID 7402 Rev 4
Figure 9.
Figure 11. Switching losses vs temperature
Collector-emitter on voltage vs
collector current
current
Electrical characteristics
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