STGB10NB37LZT4 STMicroelectronics, STGB10NB37LZT4 Datasheet - Page 4

• Manufacturer Part Number: STGB10NB37LZT4
• Description: IGBT N-CHAN 20A CLAMP D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Internally Clampedr

Specifications of STGB10NB37LZT4

• Voltage - Collector Emitter Breakdown (max): 440V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 4.5V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 125W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Capacitance, Gate: 1250 pF
• Current, Collector: 20 A
• Package Type: D2Pak
• Polarity: N-Channel
• Power Dissipation: 125 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Voltage, Collector To Emitter Shorted: Clamped
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-4106-2

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
V
J
CES
GE
= 25 °C unless otherwise specified)
V
Symbol
Symbol
Symbol
V
V
(clamped)
(BR)ECS
U.I.S.
(clamped)
C
CE(sat)
I
I
R
C
GE(th)
C
CES
GES
Q
g
oes
GE
res
ies
fs
g
Static
Dynamic
Functional characteristics
Unclamped inductive
switching current
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Collector emitter clamped
voltage (V
Emitter collector break-
down voltage (V
Gate emitter clamped
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Gate emitter resistance
Forward transconductance V
GE
= 0)
Parameter
Parameter
Parameter
CE
GE
= 0)
= 0)
Doc ID 7402 Rev 4
GE
= 0)
R
T
V
V
V
V
(see
I
T
I
I
V
V
V
T
V
V
V
C
EC
G
J
GE
GE
CE
CE
GOFF
J
J
GE
GE
CE
CE
CE
GE
CE
= 2 mA,
= 125 °C
= ± 2 mA
= -40 °C to 150 °C
= -40 °C to 150 °C
= 75 mA
Test conditions
= ±10 V
Test conditions
= 25 V, f = 1 MHz,
= 0
= 328 V, I
Test condition
= 5 V,
= 4.5 V, I
= 4.5 V, I
= V
= 15 V, T
= 200 V, T
= 25 V
Figure
= 1 kΩ, L = 1 mH,
GE
, I
,
18)
I
C
C
C
C
J
= 250 µA
C
= 150 °C
STGB10NB37LZ, STGP10NB37LZ
= 10 A
= 20 A
J
= 20 A
= 10 A,
=150 °C
Min.
Min.
Min.
380
0.6
13
18
12
1300
Typ. Max.
Typ. Max.
Typ.
105
410
1.2
1.3
12
28
20
18
±700
Max.
440
100
1.8
2.2
16
10
Unit
Unit
Unit
nC
pF
pF
pF
µA
µA
µA
kΩ
A
V
V
V
V
V
V
S