STGB10NB37LZT4 STMicroelectronics, STGB10NB37LZT4 Datasheet - Page 6

• Manufacturer Part Number: STGB10NB37LZT4
• Description: IGBT N-CHAN 20A CLAMP D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Internally Clampedr

Specifications of STGB10NB37LZT4

• Voltage - Collector Emitter Breakdown (max): 440V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 4.5V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 125W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Capacitance, Gate: 1250 pF
• Current, Collector: 20 A
• Package Type: D2Pak
• Polarity: N-Channel
• Power Dissipation: 125 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Voltage, Collector To Emitter Shorted: Clamped
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-4106-2

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Doc ID 7402 Rev 4
Figure 3.
Figure 5.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
STGB10NB37LZ, STGP10NB37LZ