STGB10NB37LZT4 STMicroelectronics, STGB10NB37LZT4 Datasheet
STGB10NB37LZT4
Specifications of STGB10NB37LZT4
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STGB10NB37LZT4 Summary of contents
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... LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the ™ PowerMESH IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection ...
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STGB10NB37LZ THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter BV Clamped Voltage (CES) BV Emitter Collector Break-down (ECR) Voltage ...
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FUNCTIONAL CHARACTERISTICS Symbol Parameter I Latching Current L U.I.S. Unclamped Inductive Switching Current SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r (di/dt) Turn-on Current Slope on Turn-on Switching Losses Eon SWITCHING OFF Symbol Parameter t ...
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STGB10NB37LZ DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 8/ PAK ...
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D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E ...