STGB7NC60HDT4 STMicroelectronics, STGB7NC60HDT4 Datasheet - Page 9

• Manufacturer Part Number: STGB7NC60HDT4
• Description: IGBT N-CHAN 25A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB7NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 25A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4108-2

Figure 20: Test Circuit for Inductive Load
Switching
Figure 21: Switching Waveforms
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
Figure 22: Gate Charge Test Circuit
Figure 23: Diode Recovery Time Waveforms
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