STGB7NC60HDT4 STMicroelectronics, STGB7NC60HDT4 Datasheet - Page 4

• Manufacturer Part Number: STGB7NC60HDT4
• Description: IGBT N-CHAN 25A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB7NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 25A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4108-2

STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
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Table 10: Collector-Emitter Diode
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
t
t
S
S
rr
rr
a
a
rr
rr
f
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Parameter
If = 3.5 A
If = 3.5 A, Tj = 125 °C
If = 7 A, V
T
If = 7 A, V
T
j
j
= 25 °C, di/dt = 100 A/µs
= 125 °C, di/dt = 100 A/µs
Test Condiction
R
R
= 40 V,
= 40 V,
Min.
0.68
0.79
Typ.
1.3
1.1
2.1
3.2
37
22
40
61
34
98
Max.
1.9
Unit
nC
nC
ns
ns
ns
ns
V
V
A
A