STGB7NC60HDT4 STMicroelectronics, STGB7NC60HDT4 Datasheet - Page 2

• Manufacturer Part Number: STGB7NC60HDT4
• Description: IGBT N-CHAN 25A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB7NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 25A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4108-2

STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
2/15
Table 3: Absolute Maximum ratings
( )
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
Table 5: Main Parameters
(#) Calculated according to the iterative formula:
I
Symbol
I
C
Rthj-case
Rthj-amb
V
CM
V
V
Symbol
P
V
V
Pulse width limited by max. junction temperature.
V
V
T
BR(CES)
CES
ECR
T
I
I
TOT
I
ISO
T
CE(sat)
I
I
GE
stg
GE(th)
C
C
F
CES
GES
C
T
( )
j
L
=
------------------------------------------------------------------------------------------------- -
R
THJ C
Collector-Emitter Voltage (V
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Diode RMS Forward Current at T
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
Storage Temperature
Operating Junction Temperature
Collector-Emitter Breakdown
Voltage
Collector cut-off Current
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
–
GE
= 0)
T
V
JMAX
CESAT M AX
CE
Parameter
–
= 0)
T
C
C
Parameter
= 25°C
(
T
C
I
GS
C
)
= 0)
CASE
C
C
C
= 25°C
= 25°C (#)
= 100°C (#)
I
V
V
V
V
V
V
C
CE
CE
GE
CE
GE
GE
=25°C UNLESS OTHERWISE SPECIFIED)
= 1 mA, V
= Max Rating, T
= Max Rating, T
= V
= ± 20V , V
= 15V, I
= 15V, I
Test Conditions
GE
, I
C
C
GE
C
= 7 A, Tc= 125°C
= 7 A
= 250 µA
= 0
CE
= 0
TO-220FP
C
STGP7NC60HD
STGB7NC60HD
C
TO-220
D²PAK
= 125 °C
= 25 °C
0.64
25
14
80
--
– 55 to 150
Min.
Min.
3.75
600
Value
600
±20
20
50
20
STGF7NC60HD
Typ.
300
Typ.
1.85
1.7
2500
0.20
10
25
6
Max.
Max.
±100
1.56
62.5
5.75
5.0
2.5
10
1
W/°C
°C/W
°C/W
°C/W
Unit
Unit
mA
µA
nA
°C
°C
W
V
V
V
A
A
A
A
V
V
V
V
V