RB160L-60TE25 Rohm Semiconductor, RB160L-60TE25 Datasheet - Page 3

• Manufacturer Part Number: RB160L-60TE25
• Description: DIODE SCHOTTKY 60V 1A SOD-106 TR
• Manufacturer: Rohm Semiconductor

Specifications of RB160L-60TE25

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 580mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Repetitive Reverse Voltage Vrrm Max: 60V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 580mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-106
• No. Of Pins: 2
• Svhc: No SVHC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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RB160L-60
0.03
0.02
0.01
30
25
20
15
10
5
0
0
0
REVERSE VOLTAGE : V
AVE:8.70kV
DC
V
C=200pF
5
R
R=0
-P
ESD DISPERSION MAP
R
CHARACTERISTICS
D=1/2
10
No break at 30kV
Sin(=180)
C=100pF
R=1.5k
15
R
(V)
20
2.5
1.5
0.5
3
2
1
0
0
DC
Sin(=180)
D=1/2
AMBIENT TEMPERATURE:Ta(C)
25
Derating Curve"(Io-Ta)
3/3
50
0A
0V
75
t
T
100
D=t/T
V
Tj=125C
R
=30V
V
Io
125
R
2.5
1.5
0.5
3
2
1
0
0
DC
D=1/2
Sin(=180)
25
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
50
0A
0V
2010.04 - Rev.D
75
t
Data Sheet
T
100
Tj=125C
D=t/T
V
R
=30V
V
Io
R
125