RB160L-40TE25 Rohm Semiconductor, RB160L-40TE25 Datasheet
RB160L-40TE25
Manufacturer Part Number
RB160L-40TE25
Description
DIODE SCHOTTKY 40V 1A SOD-106
Manufacturer
Rohm Semiconductor
Datasheet
1.RB160L-40TE25.pdf
(4 pages)
Specifications of RB160L-40TE25
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 40V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
70A
Operating Temperature Range
-40°C To +150°C
Diode Case
RoHS Compliant
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
70 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
100 uA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB160L-40TE25TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB160L-40TE25
Manufacturer:
ROHM
Quantity:
3 058
Company:
Part Number:
RB160L-40TE25
Manufacturer:
ROHM
Quantity:
3 058
Company:
Part Number:
RB160L-40TE25
Manufacturer:
ROHM
Quantity:
3 058
Company:
Part Number:
RB160L-40TE25
Manufacturer:
ROHM
Quantity:
3 058
Company:
Part Number:
RB160L-40TE25
Manufacturer:
ROHM
Quantity:
20 000
Part Number:
RB160L-40TE25
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Schottky barrier diode
RB160L-40
General rectification
1) Small power mold type. (PMDS)
2) Low I
3) High reliability.
Silicon epitaxial planar
Forward v
R
R
R
A
F
Junction tem perature
S
(*
Applications
Features
Construction
Absolute maximum ratings (Ta=25 C)
verage rectified forward current
orward current s urge peak (60Hz 1cyc)
Electrical characteristics (Ta=25 C)
torage tem perature
evers e current
evers e voltage (repetitive peak)
evers e voltage (DC)
1)Tc=90
R
.
oltage
m ax Mounted on epoxy board. 180
Param eter
Param eter
Sym bol
I
I
V
R
R
External dimensions (Unit : mm)
F
1
2
Taping specifications (Unit : mm)
Half s ine wave
Sym bol
Ts tg
V
I
V
FSM
Io
Tj
Min.
RM
R
-
-
-
Typ.
-
-
-
-40 to +150
Lim its
Max.
0.55
100
150
10
40
40
70
1
Unit
μA
μA
V
I
V
V
Land size figure (Unit : mm)
Structure
F
R
R
=1.0A
Unit
=6V
=40V
V
V
A
A
Conditions
Rev.B
RB160L-40
1/3
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RB160L-40TE25 Summary of contents
Page 1
... External dimensions (Unit : mm) Taping specifications (Unit : mm) Lim its Sym bol FSM 150 Tj -40 to +150 Ts tg Half s ine wave Sym bol Min. Typ. Max 0. 100 R RB160L-40 Land size figure (Unit : mm) Structure Unit Unit Conditions V I =1.0A F μA V =6V R μA V =40V R Rev.B 1/3 ...
Page 2
... Diodes Electrical characteristic curves (Ta=25 C) RB160L-40 2/3 Rev.B ...
Page 3
... Diodes RB160L-40 3/3 Rev.B ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...