RB160L-60TE25 Rohm Semiconductor, RB160L-60TE25 Datasheet

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... Schottky barrier diode RB160L-60 Applications General rectification Features 1) Small power mold type. (PMDS) 2) Low High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) ...

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... RB160L-60 Electrical characteristics curves 1000 Ta=75C Ta=125C Ta=25C 100 Ta=-25 200 400 600 FORWARD VOLTAGE : V (mV CHARACTERISTICS F F 550 Ta=25C I =1A F 540 n=30pcs 530 520 510 AVE:529.4 500 V DISPERSION MAP F 200 Ifsm 1cyc 150 8.3ms 100 50 AVE:126 ...

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... RB160L-60 0.03 0.02 Sin(=180) D=1/2 0. REVERSE VOLTAGE : V ( CHARACTERISTICS break at 30kV AVE:8.70kV 0 C=200pF C=100pF R=0 R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 　 2 D=t =30V R Tj=125C T 1.5 D=1/2 1 0.5 Sin(=180 100 20 AMBIENT TEMPERATURE:Ta( ...

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