RB160L-90TE25 Rohm Semiconductor, RB160L-90TE25 Datasheet
RB160L-90TE25
Specifications of RB160L-90TE25
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RB160L-90TE25 Summary of contents
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... Limits Symbol FSM Tj -40 to +150 Tstg Min. Typ. Max. Unit - - 0. 100 µA RB160L-90 Land size figure (Unit : mm) 2.0 PMDS Structure 0.3 φ1.55±0.05 φ1.55 2.8MAX Unit ℃ 150 ℃ Conditions I =1. =90V R Rev.A ...
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... Irr=0.25* AVE:7.40ns trr DISPERSION MAP 1000 IM=10mA IF=0.5A 1ms time 100 300us 10 1 0.1 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB160L-90 1000 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 190 Ta=25℃ VR=100V 180 n=30pcs 170 160 150 140 AVE:149.6pF 130 120 ...
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... ESD DISPERSION MAP 2 D=t/T VR=45V 2 Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) RB160L- 2.5 t D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) Rev ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...