RB160L-60TE25 Rohm Semiconductor, RB160L-60TE25 Datasheet
RB160L-60TE25
Specifications of RB160L-60TE25
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RB160L-60TE25 Summary of contents
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... Lim its Sym bol FSM 125 Tj -40 to +125 Ts tg Sym bol Min. Typ. Max 0. RB160L-60 Land size figure (Unit : mm) 2.0 PMDS Structure 0.3 φ1.55±0.05 φ1.55 2.8MAX Unit ℃ ℃ Unit Conditions V I =1. =60V R Rev.B 1/3 ...
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... AVE:11.7ns 5 0 trr DISPERSION MAP 1000 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=10mA IF=0.5A 1 1ms time 300us 0.1 100 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS RB160L-60 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ f=1MHz 190 VR=0V n=10pcs 180 170 160 AVE:192 ...
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... ESD DISPERSION MAP D=t/T DC VR=30V 2 Tj=125℃ T 1.5 D=1/2 1 0.5 Sin(θ＝180 100 20 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) RB160L- 2 D=t/T DC VR=30V 2 T Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...