BAS716,115 NXP Semiconductors, BAS716,115 Datasheet - Page 5

• Manufacturer Part Number: BAS716,115
• Description: DIODE SW 85V 200MA SOD523
• Manufacturer: NXP Semiconductors

Specifications of BAS716,115

• Package / Case: SC-79, SOD-523
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 200mA (DC)
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057972115::BAS716 T/R::BAS716 T/R

NXP Semiconductors
2003 Nov 07
handbook, full pagewidth
handbook, halfpage
Low-leakage diode
V
(1) Maximum values.
(2) Typical values.
Fig.5
(1) I
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
R
(nA)
I R
V = V
10
= 75 V.
10
R
10
−1
R = 50
1
2
= 1 mA.
S
R
0
Reverse current as a function of junction
temperature.
I x R
F
Ω
S
50
r
= 0.35 ns.
100
I F
Fig.7 Reverse recovery voltage test circuit and waveforms.
D.U.T.
(1)
(2)
r
= 0.6 ns; reverse voltage pulse duration t
150
OSCILLOSCOPE
T j (°C)
SAMPLING
MDB826
R = 50
MGA881
i
200
Ω
V R
5
handbook, halfpage
10%
t r
p
= 100 ns; duty factor δ = 0.05;
f = 1 MHz; T
Fig.6
90%
(pF)
C d
2.0
1.5
1.0
0.5
input signal
0
0
t p
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
BAS716
t rr
MDB827
20
(1)
t