BAS716,115 NXP Semiconductors, BAS716,115 Datasheet - Page 3

DIODE SW 85V 200MA SOD523

BAS716,115

Manufacturer Part Number
BAS716,115
Description
DIODE SW 85V 200MA SOD523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS716,115

Package / Case
SC-79, SOD-523
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
3µs
Current - Reverse Leakage @ Vr
5nA @ 75V
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057972115::BAS716 T/R::BAS716 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS716,115
Manufacturer:
NXP Semiconductors
Quantity:
90
Part Number:
BAS716,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.
2. Soldering point of the cathode tab.
2003 Nov 07
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
Low-leakage diode
d
th j-a
th j-s
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
I
I
I
V
V
V
V
when switched from I
I
I
F
F
F
F
R
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA; R
= 1 mA
= 75 V
= 75 V; T
= 100 V
= 0 V; f = 1 MHz; see Fig.6
j
3
CONDITIONS
= 150 °C
L
= 100 Ω; measured at
note 1
note 2
F
= 10 mA to
CONDITIONS
0.77
0.85
0.92
1.02
0.2
3
0.3
2
0.6
TYP.
VALUE
450
120
0.9
1
1.1
1 .25
5
80
3
Product data sheet
MAX.
BAS716
UNIT
K/W
K/W
V
V
V
V
nA
nA
nA
pF
µs
UNIT

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