BAS716,115 NXP Semiconductors, BAS716,115 Datasheet - Page 4

• Manufacturer Part Number: BAS716,115
• Description: DIODE SW 85V 200MA SOD523
• Manufacturer: NXP Semiconductors

Specifications of BAS716,115

• Package / Case: SC-79, SOD-523
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 200mA (DC)
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057972115::BAS716 T/R::BAS716 T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Nov 07
handbook, halfpage
handbook, full pagewidth
Low-leakage diode
Device mounted on a FR4 printed-circuit board.
Fig.2
Based on square wave currents; T
I FSM
(mA)
(A)
I F
10
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
j
= 25 °C prior to surge.
10
T amb (°C)
MHC323
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
0.4
10
3
0.8
(1)
t p (µs)
(2)
1.2
Product data sheet
V
MLB752 - 1
BAS716
(3)
F
MBG704
(V)
10
1.6
4