BAS716,115 NXP Semiconductors, BAS716,115 Datasheet

DIODE SW 85V 200MA SOD523

BAS716,115

Manufacturer Part Number
BAS716,115
Description
DIODE SW 85V 200MA SOD523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS716,115

Package / Case
SC-79, SOD-523
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
3µs
Current - Reverse Leakage @ Vr
5nA @ 75V
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057972115::BAS716 T/R::BAS716 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS716,115
Manufacturer:
NXP Semiconductors
Quantity:
90
Part Number:
BAS716,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAS716
Low-leakage diode
Product data sheet
2003 Nov 07

Related parts for BAS716,115

BAS716,115 Summary of contents

Page 1

DATA SHEET BAS716 Low-leakage diode Product data sheet DISCRETE SEMICONDUCTORS M3D319 2003 Nov 07 ...

Page 2

... NXP Semiconductors Low-leakage diode FEATURES • Plastic SMD package • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATION • Low leakage current applications in surface mounted circuits ...

Page 3

... NXP Semiconductors Low-leakage diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Notes 1 ...

Page 4

... NXP Semiconductors Low-leakage diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on a FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − °C prior to surge. Based on square wave currents Fig ...

Page 5

... NXP Semiconductors Low-leakage diode 2 10 handbook, halfpage I R (nA) (1) 10 (2) 1 − 100 (1) Maximum values. (2) Typical values. Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth D.U. Ω ( mA. R Input signal: reverse pulse rise time t r Oscilloscope: rise time t = 0.35 ns. ...

Page 6

... NXP Semiconductors Low-leakage diode PACKAGE OUTLINE Plastic surface mounted package; 2 leads (1) OUTLINE VERSION IEC SOD523 2003 Nov REFERENCES JEDEC JEITA SC- 0.5 scale DIMENSIONS (mm are the original dimensions) UNIT 0.65 0.34 0.17 1.25 mm 0.58 0.26 0.11 1.15 Note 1. The marking bar indicates the cathode. ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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