BAV102,135 NXP Semiconductors, BAV102,135 Datasheet - Page 8

DIODE SW G-P 200V 250MA SOD80C

BAV102,135

Manufacturer Part Number
BAV102,135
Description
DIODE SW G-P 200V 250MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV102,135

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
General Purpose Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933699350135
BAV102 /T3
BAV102 /T3
NXP Semiconductors
12. Revision history
Table 10.
BAV102_BAV103
Product data sheet
Document ID
BAV102_BAV103 v.4
Modifications:
BAV102_BAV103_3
BAV100_2
BAV100_1
Revision history
20100806
20070816
Release date
19960917
19960423
Section 4
Section 13 “Legal
All information provided in this document is subject to legal disclaimers.
“Marking”: updated
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
information”: updated
Rev. 4 — 6 August 2010
Single general-purpose switching diodes
Change notice
-
-
-
-
BAV102; BAV103
Supersedes
BAV102_BAV103_3
BAV100_2
BAV100_1
-
© NXP B.V. 2010. All rights reserved.
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