BAV102,135 NXP Semiconductors, BAV102,135 Datasheet - Page 7

DIODE SW G-P 200V 250MA SOD80C

BAV102,135

Manufacturer Part Number
BAV102,135
Description
DIODE SW G-P 200V 250MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV102,135

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
General Purpose Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933699350135
BAV102 /T3
BAV102 /T3
NXP Semiconductors
11. Soldering
BAV102_BAV103
Product data sheet
Fig 9.
Fig 10. Wave soldering footprint SOD80C
2.90
Reflow soldering footprint SOD80C
1.70
2.25
1.70
All information provided in this document is subject to legal disclaimers.
1.60
Rev. 4 — 6 August 2010
0.90
(2x)
6.30
4.90
2.70
1.90
4.55
4.30
2.30
Single general-purpose switching diodes
sod080c
BAV102; BAV103
sod080c
Dimensions in mm
solder lands
solder resist
occupied area
Dimensions in mm
solder paste
© NXP B.V. 2010. All rights reserved.
solder lands
solder resist
occupied area
tracks
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