BAV102,135 NXP Semiconductors, BAV102,135 Datasheet - Page 4

• Manufacturer Part Number: BAV102,135
• Description: DIODE SW G-P 200V 250MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAV102,135

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: General Purpose Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933699350135; BAV102 /T3; BAV102 /T3

NXP Semiconductors
BAV102_BAV103
Product data sheet
Fig 1.
Fig 3.
(μA)
I
(mA)
R
(1) T
(2) T
(3) T
10
10
600
I
400
200
10
10
F
10
−1
−2
0
1
3
2
0
Forward current as a function of forward
voltage
0
V
Solid line: maximum values
Dotted line: typical values
Reverse current as a function of junction
temperature
amb
amb
amb
R
= V
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
Rmax
(1)
100
1
(2)
T
V
j
F
(°C)
(3)
(V)
All information provided in this document is subject to legal disclaimers.
mbg459
mgd009
200
2
Rev. 4 — 6 August 2010
Fig 2.
Fig 4.
I
(pF)
FSM
(A)
C
10
10
d
1.6
1.4
1.2
1.0
0.8
10
−1
1
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
Single general-purpose switching diodes
10
amb
BAV102; BAV103
= 25 °C
10
10
2
V
10
R
© NXP B.V. 2010. All rights reserved.
3
(V)
t
p
(μs)
mbg703
mgd005
10
20
4
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