EGP30A Fairchild Semiconductor, EGP30A Datasheet - Page 86

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EGP30A

Manufacturer Part Number
EGP30A
Description
DIODE FAST GPP 3A 50V DO-201AD
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of EGP30A

Voltage - Forward (vf) (max) @ If
950mV @ 3A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 50V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
0.95 V
Recovery Time
50 ns
Forward Continuous Current
3 A
Max Surge Current
125 A
Reverse Current Ir
5 uA
Power Dissipation
6.25 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EGP30A
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30A
Manufacturer:
VISHAY/威世
Quantity:
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www.fairchildsemi.com
Bipolar Power Transistors – Dynamic Focus Transistors
TO-126 NPN Configuration
KSC5042M
TO-220F NPN Configuration
KSC5042F
Products
V
CBO
1500
1500
(V) V
CEO
900
900
(V) V
EBO
5
5
(V) I
C
0.1
0.1
(A)
P
C
(W)
4
6
Min
30
30
2-81
Discrete Power Products –
Max
h
FE
@I
0.01
0.01
C
(A) @V
CE
5
5
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
5
5
V
CE
(sat)
0.02
0.02
C
(A) @I
0.004
0.004
B
(A)
Datash
DS9008
DS9008
17.pdf
16.pdf
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