BAS16_D87Z Fairchild Semiconductor, BAS16_D87Z Datasheet
BAS16_D87Z
Manufacturer Part Number
BAS16_D87Z
Description
DIODE ULT FAST 85V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS16_D87Z.pdf
(4 pages)
Specifications of BAS16_D87Z
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
85V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
6ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS16_D87Z
Manufacturer:
Fairchild Semiconductor
Quantity:
9 974
2001 Fairchild Semiconductor Corporation
*
Small Signal Diode
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAS16
T
A
= 25°C unless otherwise noted
1
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
A6
R
R
R
R
L
= 1.0 mA
= 10 mA
= 50 mA
= 150 mA
= I
= 5.0 A
= 75 V
= 25 V, T
= 75 V, T
= 0, f = 1.0 MHz
= 100
3
Test Conditions
R
= 10 mA, I
2
A
A
= 150 C
= 150 C
RR
= 1.0 mA,
Connection Diagram
-55 to +150
-55 to +150
Min
Value
Value
85
200
350
357
1.0
2.0
85
1
3
Max
1.25
715
855
2NC
1.0
1.0
2.0
6.0
30
50
Units
Units
Units
mW
mA
C/W
V
A
A
C
C
mV
mV
pF
ns
V
V
V
BAS16, Rev. C
A
A
A
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BAS16_D87Z Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient R JA Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T Reverse Recovery Time t rr 2001 Fairchild Semiconductor Corporation BAS16 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions ...
Page 2
Typical Characteristics 150 Ta 140 130 120 110 Reverse Current, I [uA] R Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA 485 Ta 450 400 ...
Page 3
Typical Characteristics (continued 3.5 3 2 Reverse Current [mA] IRR (Reverse Recovery Current Rloop = 100 Ohms Figure 7. Reverse Recovery Time vs Reverse Current ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...