RB160M-30TR Rohm Semiconductor, RB160M-30TR Datasheet - Page 3

• Manufacturer Part Number: RB160M-30TR
• Description: DIODE SCHOTTKY 30V 1A SOD-123
• Manufacturer: Rohm Semiconductor

Specifications of RB160M-30TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 480mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 480mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-123
• No. Of Pins: 2
• Svhc: No SVHC
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Forward Voltage Drop: 0.48 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
0.08
0.06
0.04
0.02
0.1
30
25
20
15
10
5
0
0
0
ESD DISPERSION MAP
VR-P
REVERSE VOLTAGE:VR(V)
AVE:6.90kV
C=200pF
5
R=0Ω
DC
R
CHARACTERISTICS
D=1/2
10
Sin(θ＝180)
No break at 30kV
R=1.5kΩ
C=100pF
15
20
2.5
1.5
0.5
3
2
1
0
0
D=1/2
DC
Sin(θ＝180)
AMBIENT TEMPERATURE:Ta(℃)
25
Derating Curveﾞ(Io-Ta)
50
0A
0V
75
t
T
100
Tj=125℃
D=t/T
VR=15V
VR
Io
125
2.5
1.5
0.5
3
2
1
0
0
Sin(θ＝180)
25
CASE TEMPARATURE:Tc(℃)
DC
Derating Curveﾞ(Io-Tc)
50
D=1/2
0A
0V
Rev.C
RB160M-30
75
t
T
100
Tj=125℃
D=t/T
VR=15V
VR
Io
125
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