RB160M-30TR Rohm Semiconductor, RB160M-30TR Datasheet - Page 2

• Manufacturer Part Number: RB160M-30TR
• Description: DIODE SCHOTTKY 30V 1A SOD-123
• Manufacturer: Rohm Semiconductor

Specifications of RB160M-30TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 480mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 480mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-123
• No. Of Pins: 2
• Svhc: No SVHC
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Forward Voltage Drop: 0.48 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
0.001
0.01
450
440
430
420
410
400
150
100
150
100
0.1
50
50
1
0
0
0
1
Ta=125℃
100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=75℃
200
AVE:424.2mV
TIME:t(ms)
AVE:98.0A
300
10
Ifsm
400
Ifsm
Ta=-25℃
Ta=25℃
8.3ms
Ta=25℃
n=30pcs
500
t
IF=1A
1cyc
100
600
10000
1000
1000
0.01
100
100
100
0.1
0.1
10
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
1
1
0
0.001
0
IM=10mA
Mounted on epoxy board
0.01
1ms
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
300us
trr DISPERSION MAP
IR DISPERSION MAP
time
0.1
10
AVE:8.172uA
AVE:11.7ns
TIME:t(s)
IF=0.5A
15
1
10
20
Ta=125℃
Ta=-25℃
Ta=75℃
Ta=25℃
Irr=0.25*IR
Ta=25℃
n=30pcs
Ta=25℃
VR=30V
n=10pcs
IF=0.5A
IR=1A
100
25
Rth(j-a)
Rth(j-c)
1000
30
1000
100
400
390
380
370
360
350
340
330
320
310
300
100
50
10
0
0.8
0.6
0.4
0.2
1
1
0
1
0
0
Ifsm
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
NUMBER OF CYCLES
Ct DISPERSION MAP
0.5
AVERAGE RECTIFIED
8.3ms
10
AVE:324.4pF
Rev.C
RB160M-30
1cyc
10
8.3ms
D=1/2
15
1
20
DC
Ta=25℃
n=10pcs
f=1MHz
f=1MHz
VR=0V
1.5
25
2/3
100
30
2