RB160M-30TR Rohm Semiconductor, RB160M-30TR Datasheet

DIODE SCHOTTKY 30V 1A SOD-123

RB160M-30TR

Manufacturer Part Number
RB160M-30TR
Description
DIODE SCHOTTKY 30V 1A SOD-123
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of RB160M-30TR

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
480mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
50µA @ 30V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
1A
Forward Voltage Vf Max
480mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-123
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.48 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB160M-30TR
Manufacturer:
ROHM
Quantity:
1 764
Part Number:
RB160M-30TR
Manufacturer:
ROHM
Quantity:
20 000
Part Number:
RB160M-30TR
Manufacturer:
ROHM
Quantity:
321 171
Diodes
Schottky barrier diode
RB160M-30
General rectification
1) Small power mold type. (PMDU)
2) Low I
3) High reliability.
Silicon epitaxial planar
Features
Construction
Electrical characteristics (Ta=25 C)
Applications
Absolute maximum ratings (Ta=25 C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
Parameter
R
.
Parameter
Symbol
V
V
I
I
R
R
F
F
1
2
1
2
Min.
-
-
-
-
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
Symbol
Typ.
0.39
0.43
Tstg
3.0
9.0
V
I
V
FSM
Io
Tj
RM
R
Max.
0.46
0.48
20
50
-40 to +125
Limits
125
30
30
30
1
Unit
μA
μA
V
V
I
I
V
V
Land size figure (Unit : mm)
F
F
Structure
=0.5A
=1.0A
R
R
=15V
=30V
Conditions
Unit
V
V
A
A
Rev.C
RB160M-30
1/3

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RB160M-30TR Summary of contents

Page 1

... Reverse current Dimensions (Unit : mm) Taping specifications (Unit : mm) Limits Symbol FSM 125 Tj -40 to +125 Tstg Min. Typ. Max. Unit - 0.39 0.46 - 0.43 0.48 - 3.0 20 μA - 9.0 50 μA RB160M-30 Land size figure (Unit : mm) Structure Unit Conditions V I =0. =1. =15V R V =30V R Rev.C 1/3 ...

Page 2

... Diodes Electrical characteristic curves (Ta=25 C) Mounted on epoxy board RB160M-30 2/3 Rev.C ...

Page 3

... Diodes RB160M-30 3/3 Rev.C ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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