RB160M-60TR Rohm Semiconductor, RB160M-60TR Datasheet

DIODE SCHOTTKY 60V 1A SOD123

RB160M-60TR

Manufacturer Part Number
RB160M-60TR
Description
DIODE SCHOTTKY 60V 1A SOD123
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of RB160M-60TR

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
50µA @ 60V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
40pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Repetitive Reverse Voltage Vrrm Max
60V
Forward Current If(av)
1A
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-123
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB160M-60TR
Manufacturer:
ROHM
Quantity:
3 000
Part Number:
RB160M-60TR
Manufacturer:
Rohm Semiconductor
Quantity:
66 901
Part Number:
RB160M-60TR
Manufacturer:
ROHM
Quantity:
243 019
Diodes
Schottky barrier diode
RB160M-60
General rectification
1) Small power mold type. (PMDU)
2) Low I
3) High reliability.
Silicon epitaxial planar
Features
Construction
Electrical characteristics (Ta=25 C)
Applications
Absolute maximum ratings (Ta=25 C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
Capacitance terminals
R
.
Parameter
Parameter
Symbol
V
Ct
I
R
F
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
Min.
-
-
-
Symbol
Tstg
V
I
V
FSM
Io
Tj
RM
Typ.
0.49
R
7.0
40
Max.
0.55
50
-
-40 to +150
Limits
150
60
60
30
1
Unit
μA
pF
V
Land size figure (Unit : mm)
Structure
I
V
V
F
R
R
=1.0A
=60V
=10V , f=1MHz
Conditions
Unit
V
V
A
A
Rev.E
RB160M-60
1/3

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RB160M-60TR Summary of contents

Page 1

... Forward voltage F I Reverse current R Capacitance terminals Ct Dimensions (Unit : mm) Taping specifications (Unit : mm) Limits Symbol FSM Tj 150 -40 to +150 Tstg Min. Typ. Max. - 0.49 0. RB160M-60 Land size figure (Unit : mm) Structure Unit Conditions Unit V I =1. =60V μ =10V , f=1MHz pF R Rev.E 1/3 ...

Page 2

... Diodes Electrical characteristic curves (Ta=25 C) Mounted on epoxy board RB160M-60 2/3 Rev.E ...

Page 3

... Diodes No break at 30kV RB160M-60 3/3 Rev.E ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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