RB160M-30TR Rohm Semiconductor, RB160M-30TR Datasheet
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Manufacturer Part Number
RB160M-30TR
Description
DIODE SCHOTTKY 30V 1A SOD-123
Manufacturer
Rohm Semiconductor
Specifications of RB160M-30TR
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
480mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
50µA @ 30V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
1A
Forward Voltage Vf Max
480mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-123
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.48 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Diodes
Schottky barrier diode
RB160M-30
General rectification
1) Small power mold type. (PMDU)
2) Low I
3) High reliability.
Silicon epitaxial planar
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
Parameter
R
.
Parameter
Symbol
V
V
I
I
R
R
F
F
1
2
1
2
Min.
-
-
-
-
JEDEC :SOD-123
Dimensions (Unit : mm)
ROHM : PMDU
Taping specifications (Unit : mm)
Manufacture Date
1.6±0.1
0.9±0.1
Symbol
Typ.
0.39
0.43
1.81±0.1
Tstg
3.0
9.0
V
I
4.0±0.1 2.0±0.05
V
FSM
Io
Tj
RM
R
Max.
0.46
0.48
4.0±0.1
20
50
0.8±0.1
-40 to +125
0.1±0.1
0.05
φ1.55±0.05
Limits
125
30
30
30
φ1.0±0.1
1
Unit
µA
µA
V
V
I
I
V
V
Land size figure (Unit : mm)
F
F
Structure
=0.5A
=1.0A
R
R
=15V
=30V
Conditions
PMDU
Unit
0.25±0.05
℃
℃
V
V
A
A
1.5MAX
1.2
Rev.C
RB160M-30
1/3
Related parts for RB160M-30TR
RB160M-30TR Summary of contents
... Limits Symbol FSM 125 Tj -40 to +125 Tstg Min. Typ. Max. Unit - 0.39 0.46 - 0.43 0.48 - 3.0 20 µA - 9.0 50 µA RB160M-30 Land size figure (Unit : mm) 1.2 PMDU Structure 0.25±0.05 1.5MAX Unit ℃ ℃ Conditions V I =0. =1. =15V R V =30V R Rev.C 1/3 ...
... DISPERSION MAP Mounted on epoxy board 1000 IM=10mA IF=0.5A 1ms 100 time 300us 10 1 0.1 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB160M-30 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 Ta=25℃ 390 f=1MHz 380 n=10pcs 370 360 350 AVE:324 ...
... ESD DISPERSION MAP 2 D=t/T 2 VR=15V DC Tj=125℃ T 1.5 D=1/2 1 0.5 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) RB160M- 2 D=t/T 2 VR=15V DC Tj=125℃ T 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.C Io ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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