ES3B Fairchild Semiconductor, ES3B Datasheet - Page 2

• Manufacturer Part Number: ES3B
• Description: DIODE FAST 3A 100V SMC
• Manufacturer: Fairchild Semiconductor

Specifications of ES3B

• Voltage - Forward (vf) (max) @ If: 950mV @ 3A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.95 V
• Recovery Time: 20 ns
• Forward Continuous Current: 3 A @ Ta=75C
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Power Dissipation: 1.66 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ES3B

ES3A - ES3J Rev. F
Typical Performance Characteristics
Figure 1. Foward Current Deration Curve
NOTES:
2. Rise time = 10 ns max; Source impedance = 50 ohms.
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
50Ω
NONINDUCTIVE
Figure 3. Total Capacitance
50Ω
NONINDUCTIVE
50V
(approx)
DUT
50Ω
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
Pulse
Generator
(Note 2)
(-)
(+)
2
Figure 4. Reverse Current vs Reverse Voltage
Figure 2. Foward Voltage Characteristics
0.01
100
0.1
10
1
0.4
-0.25A
+0.5A
-1.0A
0
0.6
Forward Voltage Drop, V
0.8
ES3A-ES3D
1.0cm
1.0
trr
1.2
SET TIME BASE FOR
T
Pulse Width = 300us
2% Duty Cycle
5/ 10 ns/ cm
A
=25
1.4
F
[V]
o
C
1.6
ES3J
www.fairchildsemi.com
1.8