PMBD7000,215 NXP Semiconductors, PMBD7000,215 Datasheet - Page 9

• Manufacturer Part Number: PMBD7000,215
• Description: DIODE SW DBL 100V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD7000,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 100V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.1@0.1AV
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1736-2; 933859210215; PMBD7000 T/R

NXP Semiconductors
12. Revision history
Table 9.
PMBD7000
Product data sheet
Document ID
PMBD7000 v.4
Modifications:
PMBD7000_3
PMBD7000_2
PMBD7000_1
Revision history
20100916
19990511
19960918
19960419
Release date
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•
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•
•
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 4 “Marking
Table 7
Figure
Section 8 “Test
Section 8.1 “Quality
Section 13 “Legal
2: updated
“Characteristics”: corrected V
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
information”: figure title of
Rev. 4 — 16 September 2010
codes”: updated
information”: updated
information”: added
F
unit for condition I
Figure 6
Change notice
-
-
-
-
Double high-speed switching diode
amended
F
= 150 mA
Supersedes
PMBD7000_3
PMBD7000_2
PMBD7000_1
-
PMBD7000
© NXP B.V. 2010. All rights reserved.
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