PMBD7000,215 NXP Semiconductors, PMBD7000,215 Datasheet - Page 3

• Manufacturer Part Number: PMBD7000,215
• Description: DIODE SW DBL 100V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD7000,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 100V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.1@0.1AV
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1736-2; 933859210215; PMBD7000 T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PMBD7000
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
Symbol
Per diode
V
V
I
I
I
P
Per device
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
th(j-t)
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
j
= 25 °C prior to surge.
Limiting values
Thermal characteristics
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 16 September 2010
Conditions
square wave
T
amb
t
t
t
Conditions
in free air
p
p
p
= 1 μs
= 1 ms
= 1 s
≤ 25 °C
Double high-speed switching diode
[1][4]
[1][2]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
−55
−65
Min
-
-
PMBD7000
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
100
100
215
125
450
4
1
0.5
250
150
+150
+150
Max
500
360
Unit
V
V
mA
mA
mA
A
A
A
mW
°C
°C
°C
Unit
K/W
K/W
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